Semi-insulating GaP as a material for manufacturing photoconductive semiconductor switches

摘要

The paper shows initial experimental results of research works taken by teams of the Institute of Electronic MaterialsTechnology and Military University of Technology aimed at manufacturing in Poland photoconductive semiconductorswitches (PCSSs) on semi-insulating (SI) gallium phosphide (GaP) wafers. These devices will allow pulsed switching ofpower circuits to high-voltage networks as well as triggering the high-energy of electromagnetic radiation. Theproperties and concentrations of deep-level defects, contributing to the charge compensation enabling the SI GaP crystalsto be obtained, have been studied by the high-resolution photoinduced transient spectroscopy (HRPITS). The chips ofswitches with two planar electrodes separated by a gap of 2 mm were made and the connections enabling the darkcurrent and photocurrent measurements as a function of the electric field strength to be carried out were assembled. Theways of increasing the switch amperage in the conductive state are discussed.