Modeling of the capture and thermal escape of the carriers from InAs quantum dots at different temperatures

摘要

A theoretical model for the dependence on temperature of the carrier behavior in a semiconductor structure containing InAs quantum dots grown inside a Ga_(0.85)In_(0.15)As quantum well is presented. The conditions that have to be imposed in order to obtain analytical solutions with obvious physical interpretation are kept to minimum. Two temperature domains are approached in this model, In the low temperature case the equation system that describes the carrier behavior can be reduced to a cubic equation. One of the solutions of the equation represents the quantum dot photoluminescence yield. Also, a solution is obtained for the dot emission yield in the high temperature domain, where the carrier thermal escape from dots cannot be neglected. The solution depends on the probabilities for electron and hole capture and reemission, and on the number of dot states occupied by electrons and holes. Temperature dependent measurements of the quantum dot photoluminescence are performed and the results are fit with the theoretical model.