3.3kV IGBT Modules with Optimized Trench-Field Stop L3 and E3 Chip Technology in Industrial Drive Application

摘要

Comparing to the 2nd NPT chip technology, a new 3.3kV IGBT3 family provides two different versions of L3 and E3 chips with optimization of switching performance. The trade-off between the softness and losses of switching-off process is achieved to adapt the different applications. The maximum operational junction temperature is also extended up to 150℃ to increase the output current capability. The paper mainly compares the differences between HL3 and HE3 regarding static characteristic, switching behaviour and losses as well as safe operation area. Some lab measurements are executed to highlight and evaluate their respective advantages. The IGBT application technology in industrial drive is further discussed as well.