Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-Nishi, Miyazaki, 889-2192, Japan;
femtosecond laser; thermal effect; image-intensified CCD camera; photo-machining; drilling process; dicing technique; thin silicon substrate; time-resolved imaging;
机译:飞秒型飞秒激光在薄半导体衬底上划片技术的发展
机译:飞秒激光烧蚀薄硅基板的时间分辨图像分析
机译:飞秒激光双脉冲延迟的半导体烧蚀区域拟周期振荡
机译:具有飞秒激光烧蚀的薄半导体基板的切割技术的开发
机译:飞秒脉冲激光烧蚀和硅衬底上用于MEMS制造的3C碳化硅膜的图案化。
机译:Femtosecond双脉冲激光烧蚀和共掺杂ZnS薄膜的沉积
机译:通过使用时间形飞秒激光的薄半导体衬底切割技术的开发