Integration of New Alignment Mark Designs in Dual Inlaid Copper Interconnect Processes

摘要

In a joint development program between ASML and Motorola a new set of alignment marks have been designed and tested using the ATHENA off-axis alignment system on the ASML scanner. The new marks were analyzed for improved robustness against varying wafer-processing conditions to verify improved overlay capability and stability. These new marks have been evaluated on a set of dual inlaid-copper short flow wafers, with layer stacks consisting of 180 nm technology generation dielectric materials. Typical process variation has been deliberately introduced as part of the designed experiment to study the performance robustness of the new alignment marks. This paper discusses the new mark design and the theoretical reasons for mark design and/or integration change. Results shown in this paper provide initial feedback as to the viability of new variations of ATHENA alignment marks, specifically the SSPM and VSPM. Included in the results is the investigation to further stabilization of alignment signal strength. New ideas that are currently under development, to increase alignment mark signal strength stability, are discussed.