Development of an automated optical system for the analysis of etch pits density and distribution on semiconductor materials

摘要

In this ppaer we present results related to the development of an alternative and non-destructive method for determining and mapping the etch pits density, in real time, by using digital imaging processing in association with an optical system. The density and distribution of the dislocation etch pits were obtained by the specular reflection produced by either a He-Ne laser or a white light on an etched semiconductor material surface. As the pits related to dislocations have a typical geometric form according to crystallographic plane of the surface they become more evident than other defects and, as a consequence this allows to reach selectivity for this specific defect by the systme. The efficiency of the suggested method was accomplished by comparing the results obtained with conventional analysis done by optical microscopy.