Luminescence of nanostructured Y_2O_3:Eu thin films fabricated using glancing angle deposition techniques

摘要

Thin films of europium-doped yttrium oxide (Y_2O_3:Eu), a well-known luminescent material, were grown using electron beam evaporation, in combination with the Glancing Angle Deposition (GLAD) technique. GLAD makes use of controlled substrate motion during physical vapour deposition (PVD), resulting in a high degree of control over the nanostructure of the film. Until recently GLAD had not been used with luminescent materials. Films were deposited using pre-doped Y_2O_3:Eu source material, with either 4.0% (wt) Eu doping or 5.6% (wt) Eu doping. The nanostructure of these films was characterized through scanning electron microscopy, while the light emission properties of these films was characterized by photoluminescence measurements. In order to optimize the light emission properties of the films the partial pressure of oxygen during the deposition of the films was varied. Films were deposited on both silicon and sapphire substrates, in order to compare how different substrates affect the growth and light emission of the films.