首页> 外文会议>Conference on Nano-Optics and Nano-Structures, Oct 15-16, 2002, Shanghai, China >Pulse propagation in quantum wells with multiple valence subband structure
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Pulse propagation in quantum wells with multiple valence subband structure

机译:具有多价子带结构的量子阱中的脉冲传播

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Using the Luttinger formulations, we have analyzed the propagation characteristics of an ultrashort (femtosecond) coherent radiation pulse in the transverse plane of a direct gap semiconductor quantum well waveguide structure (QWWS). The semiconductor QWWS is considered to possess degenerate valence subbands near the centre of the Brillouin zone. The photoinduced resonant transitions below the band edge to both 1s and 2s excitonic states from the light hole (lh) and heavy hole (hh) subbands have been considered. The cross-over between the lh and hh bands occurs in case of transverse plane where the light holes are found to play more dominant role than the heavy holes. We have analyzed the transient pulse propagation characteristics like pulse break-up and optical nutation. The transverse electric mode propagation is also studied in the QWWS assuming the same to behave as a three-layer asymmetric planar waveguide. Numerical analysis made for GaAs/AlGaAs QWWS duly shined by a 150 fs Ti:Sapphire laser shows good qualitative agreement of the present results with those available in literature.
机译:使用Luttinger公式,我们分析了超短(飞秒)相干辐射脉冲在直接间隙半导体量子阱波导结构(QWWS)的横向平面中的传播特性。半导体QWWS被认为在布里渊区的中心附近具有简并价子带。已经考虑了在光带边缘以下从光孔(lh)和重孔(hh)子带到1s和2s激子态的光致共振跃迁。在lh和hh波段之间的交叉发生在横向平面的情况下,在该横向平面中,发现轻孔比重孔起主要作用。我们已经分析了瞬态脉冲传播特性,例如脉冲破裂和光学章动。在QWWS中还研究了横向电模传播,假设其行为与三层非对称平面波导相同。用150 fs Ti:蓝宝石激光器适当照射的GaAs / AlGaAs QWWS的数值分析表明,本研究结果与文献中的结果在质量上具有良好的一致性。

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