【24h】

X pinch source characteristics for x-rays above 10 keV

机译:10 keV以上的X射线的X夹源特性

获取原文
获取原文并翻译 | 示例

摘要

X pinch radiation produced by electron beams accelerated in the X pinch minidiode ranging in energy from 10 to 100 keV has been studied and used to image a variety of different objects. The experiments have been carried out using the XP pulser (470 kA, 100 ns) at Cornell University and the BIN pulser (280 kA, 120 ns) at the P. N. Lebedev Physical Institute. This electron-beam-generated x-ray source's geometric, temporal and spectral properties have been studied over different energy ranges between 10 and 100 keV. The imaging was carried out in a low magnification scheme, and spatial resolution of a few tens of μm was demonstrated.
机译:已经研究了在X收缩微型二极管中加速的电子束产生的X收缩辐射,其能量范围为10到100 keV,并用于对各种不同的物体成像。实验是使用康奈尔大学的XP脉冲发生器(470 kA,100 ns)和宾利·列别杰夫物理研究所的BIN脉冲发生器(280 kA,120 ns)进行的。在10至100 keV之间的不同能量范围内,已经研究了这种电子束产生的X射线源的几何,时间和光谱特性。以低倍率方案进行成像,并且证明了几十μm的空间分辨率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号