A 12 x 12 InGaAs/InAlAs Avalanche Photodetector Array

摘要

In summary, we have demonstrated a 12 x 12 long-wavelength InGaAs/InAlAs SACM APD array. The APDs in this array exhibited uniform distributions of breakdown voltage, dark current, and multiplication gain. High external quantum efficiencies were achieved in the wavelength range from 1.0 μm to 1.6 μm. Further optimizations of device processing, material growth, and device structure are planned in order to obtain APD arrays that have larger pixel numbers, better device uniformity, and higher quantum efficiency.