Recording of holograms by photo structural transformations in chalcogenide vitreous semiconductors

摘要

Exposure and frequency characteristics of holograms obtained by the method of photo structural transformations in chalcogenide vitreous semiconductors have been studied. The maximal values of diffraction efficiency and sensitivity have been determined. The kinetics of isothermal erasure of holograms has been studied. The presence of residual holograms after a long erasure has been observed. Their diffraction efficiency is up to 20% from the initial value. The Bunsen-Roscoe's law is only observed at the η = 1% at the recording of holograms by the method of photo structural transformations in chalcogenide vitreous films.