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Timing-Aware Metal Fill For Optimized Timing Impact and Uniformity

机译:时序感知金属填充,可优化时序影响和均匀性

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During the deep sub-micron semiconductor manufacturing process, the Chemical-Mechanical Polishing (CMP) is applied on conductor layers to create a planar surface over the wafer. To ensure layer uniformity after CMP and to avoid metal dishing and erosion effects, dummy metals are usually inserted to the layers either by designers or foundries. However, adding dummy metal polygons can have undesirable impact to the capacitance and hence the timings of the clock paths and signal paths in the design. Chartered and Magma jointly developed and validated a methodology combining the router timing-aware track fill followed by foundry metal fill to minimize the timing impact of the metal fill to the design as well as achieving high quality copper uniformity. In this paper, we will show the proposed metal fill methodology outperform the conventional approaches of metal fill or track fill. The proposed metal fill was validated using Static Timing Analysis and an accurate silicon calibrated CMP model is used for copper (Cu) thickness distributions comparisons. From the 65nm case study results, the timing impact to the design in terms of total number of nets with slack degradation has been reduced from 4% to 0.24%. And the copper uniformity in terms of standard deviation of the copper density has been improved from 0.192 to 0.142 on average. The deployment of proposed metal fill is integrated seamlessly into the reference design flow.
机译:在深亚微米半导体制造过程中,将化学机械抛光(CMP)应用于导体层,以在晶片上方形成平坦表面。为了确保CMP后的层均​​匀性并避免金属凹陷和腐蚀效果,通常由设计人员或铸造厂将伪金属插入层中。但是,添加虚拟金属多边形可能会对电容产生不良影响,并因此对设计中时钟路径和信号路径的时序产生不良影响。 Chartered和Magma共同开发并验证了一种方法,该方法结合了路由器定时感知的轨迹填充和铸造金属填充相结合,以最大程度地减少金属填充对设计的时序影响并实现高质量的铜均匀性。在本文中,我们将显示拟议的金属填充方法优于传统的金属填充或轨迹填充方法。拟议的金属填充已使用静态时序分析进行了验证,并且使用了精确的硅校准CMP模型进行铜(Cu)厚度分布比较。从65nm的案例研究结果来看,对具有松弛退化的网的总数的设计时序影响已从4%降低到0.24%。并且,就铜密度的标准偏差而言,铜均匀性平均从0.192提高到0.142。建议的金属填充物的部署无缝集成到参考设计流程中。

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