首页> 外文会议>Conference on advanced photon counting techniques III; 20090414-16; Orlando, FL(US) >Negative Feedback Avalanche Diodes for Near-infrared Single Photon Detection
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Negative Feedback Avalanche Diodes for Near-infrared Single Photon Detection

机译:负反馈雪崩二极管,用于近红外单光子检测

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In recent years significant progress has been made in near-infrared single photon detection using Geiger-mode InP-based single photon avalanche diodes (SPADs). A more detailed understanding of these detectors with regard to device design, material growth and device fabrication has led to continual performance improvements. A variety of circuits for enabling SPAD Geiger-mode operation have been proposed and demonstrated as well. However, due to the inherent positive feedback nature of the avalanche process, Geiger-mode SPADs are constrained by certain performance limitations, particularly with regard to counting rate and the absence of photon number resolution. These limitations hinder the use of SPADs in certain applications. By incorporating a negative feedback mechanism into InP-based SPADs, these SPAD performance limitations can be overcome. In this paper, we present a negative feedback avalanche diode (NFAD), which is formed by monolithically integrating a passive negative feedback element with a high-performance InP-based SPAD. We describe the design and operation of the NFAD device, along with basic characteristics such as pulse response and quenching dynamics, as well as the dependence of these characteristics on excess bias voltage and input photon number. We will also review the results of near-infrared single photon counting performance for fundamental performance parameters such as photon detection efficiency, dark count rate, and afterpulsing.
机译:近年来,使用基于Geiger模式InP的单光子雪崩二极管(SPAD)在近红外单光子检测方面取得了重大进展。对这些检测器在设备设计,材料生长和设备制造方面的更详细了解已导致持续的性能改进。已经提出并展示了用于实现SPAD Geiger模式操作的多种电路。但是,由于雪崩过程固有的正反馈性质,盖革模式的SPAD受某些性能限制的限制,特别是在计数率和缺乏光子数分辨率方面。这些限制阻碍了在某些应用程序中使用SPAD。通过将负反馈机制集成到基于InP的SPAD中,可以克服这些SPAD性能限制。在本文中,我们介绍了一种负反馈雪崩二极管(NFAD),它是通过将无源负反馈元件与基于InP的高性能SPAD单片集成而形成的。我们描述了NFAD器件的设计和操作,以及诸如脉冲响应和猝灭动力学等基本特性,以及这些特性对过量偏置电压和输入光子数的依赖性。我们还将针对基本性能参数(例如光子检测效率,暗计数率和后脉冲),回顾近红外单光子计数性能的结果。

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