Group of Applied Physics, University of Geneva, Chemin de Pinchat 22, Geneve 4, CH-1211, Switzerland;
Group of Applied Physics, University of Geneva, Chemin de Pinchat 22, Geneve 4, CH-1211, Switzerland;
Group of Applied Physics, University of Geneva, Chemin de Pinchat 22, Geneve 4, CH-1211, Switzerland;
Group of Applied Physics, University of Geneva, Chemin de Pinchat 22, Geneve 4, CH-1211, Switzerland;
Single-photon avalanche diode (SPAD); APD; single photon; InGaAs/InP; Negative feedback avalanche diode (NFAD); singlet oxygen; photodynamic therapy;
机译:低噪声InGaAs / InP单光子负反馈雪崩二极管的后脉冲研究(vol 62,pg 1151,2015)
机译:具有有源复位电路的栅被动钝化的基于InGaAs / InP的单光子雪崩二极管的特性
机译:具有有源复位电路的栅被动钝化的基于InGaAs / InP的单光子雪崩二极管的特性
机译:低噪声IngaAs / InP单光子负反馈雪崩二极管:表征和应用
机译:用于荧光寿命成像和微阵列应用的CMOS单光子雪崩二极管阵列
机译:厚的0.35μmCMOS单光子雪崩二极管雪崩瞬变
机译:低噪声InGaAs / InP单光子负反馈雪崩二极管的后脉冲研究
机译:负反馈在减少辉光放电噪声中的应用