Double-side IGBT phase leg architecture for reduced recovery current and turn-on loss

摘要

A double-side IGBT (DIGBT) phase leg architecture that uses the DIGBT as a substitute for a free wheeling diode to achieve reduced turn-on loss and reduced reverse recovery peak current during turn-on is described and characterized. Approximately a 50% reduction in reverse recovery peak current and an 80% reduction in recovery charge are achieved. In addition, low power dissipation (≈1 A current level) protection circuitry is described that can be incorporated into the DIGBT phase leg architecture to allow the flow of reverse current even if the gate driver circuit is disabled so that conventional high current free wheeling diodes are not required to provide protection.