Spin-conserved electron transport to InGaAs quantum dots through GaAs/AlGaAs superlattice

摘要

We report on the spin-conserved electron transport to self-assembled InGaAs quantum dots (QDs) through GaAs/AlGaAs superlattice (SL) by circularly polarized time-resolved photoluminescence spectroscopy of the QD excited states with the selective excitation for the SL minibands. The spin transport properties largely depend on the AlGaAs barrier thickness of the SL. The SL with a thinner barrier demonstrates a quantum spin transport to QDs with highly conserving the electron-spin polarization during the transport process through the SL minibands.