Enhanced Electrical Properties of AlInN/AlN/GaN Heterostructure using

摘要

superlattice (SL) layer in the buffer layer on the dislocation density and transport property of AlInN/AIN/GaN heterostructures grown on 150 mm silicon (111) substrate is investigated. It is found that the threading dislocation density in the GaN buffer strongly depends on the composition, thickness and the position of the SL layer. Electron mobility of 1,940 cm