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Evaluation of Various Cleaning Methods to Reduce the Post Oxide CMP Defect Density

机译:评估各种清洁方法以减少氧化后CMP缺陷密度

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摘要

Based on the comparison of defect measurements post contact liner and post Via liner respectively it was found that appropriate wet chemistry steps can significantly reduce the defect density caused by CMP particles. In order to clean the wafer from slurry particles different cleaning steps were investigated. Among 3 different wet chemistry processes an additional water touch-up step on the final platen was proven to be the most feasible process to reduce remaining slurry particles post IMD CMP.
机译:基于分别对接触衬里和通孔衬里后的缺陷测量结果的比较,发现适当的湿化学步骤可以显着降低由CMP颗粒引起的缺陷密度。为了从浆液颗粒清洁晶片,研究了不同的清洁步骤。在3种不同的湿化学工艺中,已证明在最终压板上进行额外的补水步骤是减少IMD CMP后残留浆液颗粒的最可行方法。

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