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Cermet Ceramic Coating on Diamond Dresser for In-Situ Dressing of Chemical Mechanical Planarization

机译:金刚石修整器上的金属陶瓷涂层,用于化学机械平面化的原位修整

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摘要

In recent years, copper circuitry has been replacing aluminum wires and tungsten via as the dominant interconnections. The polishing of copper circuitry requires using highly acidic solution (e.g. pH = 4) and with strong oxidizing agent (e.g. hydrogen peroxide). In order to withstand the corrosive reactions, the bonding metal of the CMP pad conditioners must be corrosion resistant. Otherwise, it will be dissolved in the acidic slurry that may contaminate the delicate circuitry. Ideally, the diamond pad conditioner is best shielded from contacting with the acidic slurry. The chemical shield must be made of a hard substance so it can withstand the polishing action of the slurry. In addition, this hard substance ought to be highly inert so it will not react with the chemicals in the slurry. The best chemical shield is diamond-like carbon (DLC) and the second best is ceramic coating. Kinik Company pioneered diamond pad conditioners protected by DLC barrier (DiaShield~® Coating) back in 1999 (Sung & Lin, US Patent 6,368,198) and there has been no follower since then. Kinik's offered two varieties of DiaShield~® Coatings: ultrahard amorphous diamond and superhard hydrogenated DLC. Recently, Kink also evaluated Cermet Composite Coating (CCC or C~3, patent pending). C~3 is unique that the coating composition grades from a metallic (e.g. stainless steel) under layer to a ceramic (e.g. Al_2O_3 or SiC) exterior. The metallic under layer can form metallurgical bond with metallic matrix on the diamond pad conditioner. The ceramic exterior is both wear and corrosion resistant. The gradational design of C~3 coating will assure its strong adherence to the substrate because there is no weak boundary between coating and substrate. By dipping diamond pad conditioners of various designs in acidic solution (e.g. copper cleaning solution) for extended period of time (e.g. 50 hours) the chemical inertness of various matrix materials are determined with the decreasing ranking as: hydrogenated DLC > C~3 coating > amorphous diamond > sintered nichrome > brazed alloy > electroplated nickel.
机译:近年来,铜电路已取代铝线和钨通孔成为主要互连。铜电路的抛光需要使用高酸性溶液(例如pH = 4)和强氧化剂(例如过氧化氢)。为了承受腐蚀反应,CMP抛光垫修整器的结合金属必须耐腐蚀。否则,它将溶解在酸性浆料中,这可能会污染精密电路。理想情况下,最好将金刚石垫修整剂与酸性浆液接触。化学防护罩必须由硬质物质制成,以便可以承受浆料的抛光作用。另外,这种硬物质应该是高度惰性的,因此它不会与浆液中的化学物质反应。最好的化学防护层是类金刚石碳(DLC),第二好是陶瓷涂层。 Kinik Company早在1999年就率先推出了受DLC屏障(DiaShield®涂层)保护的金刚石垫修整剂(Sung&Lin,美国专利6,368,198),此后一直没有追随者。 Kinik提供了两种DiaShield〜®涂层:超硬非晶金刚石和超硬氢化DLC。最近,Kink还评估了金属陶瓷复合涂层(CCC或C〜3,正在申请专利)。 C〜3是独特的,涂料组合物从金属(例如不锈钢)底层到陶瓷(例如Al_2O_3或SiC)外层分级。金属底层可以在金刚石垫修整器上与金属基体形成冶金结合。陶瓷外壳既耐磨又耐腐蚀。 C〜3涂层的渐变设计将确保其与基材的牢固粘附性,因为涂层与基材之间没有弱边界。通过将各种设计的金刚石垫修整剂浸入酸性溶液(例如铜清洗液)中一段较长的时间(例如50小时),可以确定各种基质材料的化学惰性,其排名依次为:氢化DLC> C〜3涂层>非晶金刚石>烧结镍铬合金>钎焊合金>电镀镍。

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