首页> 外文会议>Circuits and Systems (LASCAS), 2012 IEEE Third Latin American Symposium on >2.45GHz low phase noise LC VCO design using Flip Chip on low cost CMOS technology
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2.45GHz low phase noise LC VCO design using Flip Chip on low cost CMOS technology

机译:在低成本CMOS技术上使用倒装芯片的2.45GHz低相位噪声LC VCO设计

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Phase Noise performance of LC VCOs is strongly dependent on the Quality Factor of the Inductors. As known, low cost CMOS technologies, the on-chip inductors have low quality factors compared to external inductors. But, using external inductors connected by traditional bonding technologies limits the integration capacity. To implement high performance RF circuits, the use of the Flip Chip technology is growing in ICs packaging. This work presents a comparison between two LC VCOs operating at 2.4GHz ISM band, using a standard 0.35μm CMOS process. One using internal inductor (OC-VCO), and a second using a high-Q external inductor connected by Flip Chip Technology (FC-VCO). The results for the designed FC-VCO are a low phase noise of -121dBc/Hz@1MHz and -132dBc/Hz@3MHz, tuning range of 203MHz and power consumption of 10.8mW at 3V. FC-VCO improves -9.7dBc/Hz@1MHz if compared with the OC-VCO using the same power consumption and inductance value. Additionally, FC-VCO presents a better figure of merit (FOM) than other published works, even for more advanced technologies.
机译:LC VCO的相位噪声性能在很大程度上取决于电感器的品质因数。众所周知,低成本CMOS技术与外部电感器相比,片上电感器的品质因数低。但是,使用通过传统键合技术连接的外部电感器会限制集成能力。为了实现高性能RF电路,倒装芯片技术在IC封装中的使用正在增长。这项工作使用标准的0.35μmCMOS工艺,对两个工作在2.4GHz ISM频段的LC VCO进行了比较。一种使用内部电感(OC-VCO),另一种使用通过倒装芯片技术(FC-VCO)连接的高Q外部电感。设计的FC-VCO的结果是-121dBc / Hz @ 1MHz和-132dBc / Hz @ 3MHz的低相位噪声,203MHz的调谐范围和3V时的功耗10.8mW。与使用相同功耗和电感值的OC-VCO相比,FC-VCO可提高-9.7dBc/Hz@1MHz。此外,即使对于更先进的技术,FC-VCO的品质因数(FOM)也比其他已发表的作品更好。

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