Electrical Characteristics and Impedance spectra of Gd2O3-doped Bi4Ti3O12 Ceramics

摘要

The electrical properties of Gd2O3-bismuth titanate (Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated.At applied d.c.field below 200V/mm,the current-voltage curve of Gd-doped sample exhibits a simple ohmic behavior.The impedance spectrum of Gd-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions.XRD,SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform.Gd-doped sample exhibit randomly oriented and plate-like morphology.