Simulation, fabrication and characterization of 6500V 4H-SiC power DMOSFETs

机译：6500V 4H-SiC功率DMOSFET的仿真，制造和表征

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doped drift epilayer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC DMOSFETs were reported. A peak effective channel mobility of 20 cm

机译：掺杂漂移外延层。本文报道了4H-SiC DMOSFET的仿真，制造和电学特性。有效通道迁移率峰值为20厘米

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来源
《China International Forum on Solid State Lighting;International Forum on Wide Bandgap Semiconductors China》|2017年|144-147|共4页
会议地点 Beijing(CN)
作者
Shiyan Li; Hao Liu; Runhua Huang; Yonghong Tao; Qiang Liu; Yun. Li; S. Bai;
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State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Nanjing China;

State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Nanjing C;

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关键词
Silicon carbide; MOSFET; Electric fields; Current density; Temperature measurement; JFETs; Logic gates;

机译：碳化硅; MOSFET;电场；当前密度;温度测量；场效应管;逻辑门;

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专利

1. Simulation and Optimization of 4H-SiC DMOSFET Power Transistors [J] . Chien-Chung Hung, Young-Shying Chen, Cheng-Tyng Yen, Materials science forum . 2013,第期

机译：4H-SiC DMOSFET功率晶体管的仿真和优化
2. Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes [J] . Ling Sang, Lixin Tian, Fei Yang, Materials science forum . 2020,第1期

机译：6500V 4H-SiC JBS二极管的非均匀间距多浮面圆环的设计和制造
3. Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching [J] . Pushpakaran Bejoy N., Bayne Stephen B., Ogunniyi Aderinto A. Journal of Computational Electronics . 2016,第1期

机译：感应开关下4H-SIC DMOSFET结构的基于物理的仿真
4. Simulation, Fabrication and Characterization of 6500V 4H-SiC power DMOSFETs [C] . Shiyan Li, Hao Liu, Runhua Huang, China International Forum on Solid State Lighting . 2017

机译：6500V 4H-SIC POWER DMOSFET的仿真，制造和表征
5. Evaluation of 4H-SiC photoconductive switches for pulsed power applications based on numerical simulations. [D] . Tiskumara, Rajintha. 2016

机译：基于数值模拟的脉冲功率应用4H-SiC光电导开关的评估。
6. Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window [O] . Yi Wen, Xiao-jie Xu, Meng-ling Tao, 2020

机译：高效率保护的4H-SIC动力装置CFM-JTE的表征和制造及JTE剂量耐受窗口
7. A Simulation Study on the Structural Optimization of a 800 V 4H-SiC Power DMOSFET [O] . 2009

机译：800 V 4H-SIC POWER DMOSFET结构优化的仿真研究

Simulation, fabrication and characterization of 6500V 4H-SiC power DMOSFETs

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