Ferromagnetism and structure in Fe-doped GaN films

摘要

Fe-doped GaN films have been successfully fabricated on silicon (100) substrates through ammoniating Ga2O3:Fe films under flowing ammonia atmosphere at the temperature of 950 ℃. The structure of the samples was characterized by X-ray diffraction (XRD). No second phases were found with the increasing of Fe ion concentration from 0% to 7%. Magnetic measurements indicated that all the films were ferromagnetic at room temperature, and the moment per Fe atom decreased with increasing Fe concentration. The largest magnetic moment observed was 1.92μB/Fe for Ga1-xFexN (x=0.01) film.