PHOTON EMISSION OF ELECTRONS IN A CRYSTALLINE UNDULATOR

摘要

Experiments have been performed at the Mainz Microtron MAMI to explore the radiation emission from a 4-period epitaxially grown strained-layer Si_(1-x)Ge_x undulator with a period length of 50 μm at (110)-planar channeling of electrons. At a beam energy of 855 MeV a small excess yield in comparison with a flat reference crystal has been observed at a photon energy around 120 keV, while at a beam energy of 1508 MeV a rather large excess yield has been found which peaks at about 1 MeV.