DEEP ENERGY LEVELS IN N-TYPE SILICON INTRODUCED BY PALLADIUM DIFFUSION

摘要

The results of a study carried out on N-type silicon diffused with palladium using DLTS method are reported. In the case of diffusion temperature 860℃, diffusion time influence the deep levels related to Pd-induced defects. In the case of short-time diffusion (4 minutes) two significant energy levels were found, the level E_c- 0.22 eV related to Pd in substitutional positions and the level E_c-0.37 eV related to Pd in interstitial positions. For longer diffusion time interstitial Pd transformes into substitutional positions in connection with the interstitial-substitutional mechanism of Pd diffusion and in the case of Pd diffusion for 20 minutes only one dominant level E_c- 0.22 eV was found. Energy levels of etching-induced surface deffects are also reported.