A Model for Describing the Effect of Series Resistance in Pseudo-MOS Transistors

摘要

This work presents the modeling of drain and source series resistances (R_S and R_D) effects in MOS transistors, in the linear and saturation regions of operation. The investigation is focused on the saturation regime, where R_Srnand R_D can be determined independently. There are also presented typical values extracted for MOSFET series resistances.