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RAMAN SCATTERING STUDY OF Zn~+/P~+ CO-IMPLANTED GaAs SINGLE CRYSTALS

机译：Zn〜+ / P〜+共注入GaAs单晶的拉曼散射研究

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The activation efficiency of zinc impurity co-implanted with P~+ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P~+ co-implantation has been found to result in impurity activation improvement, the optimum electrical parameters of implanted layers being achieved after sample annealing at 700℃.

机译：通过声子-等离子体激元耦合模式的拉曼散射（RS）研究了GaAs单晶中P +离子共注入锌杂质的活化效率。已发现P〜+共注入可改善杂质活化，在700℃样品退火后可获得最佳的注入层电参数。

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来源
《CAS'95 proceedings》|1995年|99-102|共4页
会议地点 Sinaia(RO);Sinaia(RO)
作者
V.V. Ursaki; V.M. Ichizli; I.M. Tiginyanu; A.I. Terletskii; Yu.I. Caluja; S.I. Radautsan;
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作者单位

Institute of Applied Physics, 277028 Kishinev, Moldova;

Institute of Applied Physics, 277028 Kishinev, Moldova;

Institute of Applied Physics, 277028 Kishinev, Moldova;

Institute of Applied Physics, 277028 Kishinev, Moldova;

Institute of Applied Physics, 277028 Kishinev, Moldova;

Institute of Applied Physics, 277028 Kishinev, Moldova;

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正文语种 eng
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RAMAN SCATTERING STUDY OF Zn~+/P~+ CO-IMPLANTED GaAs SINGLE CRYSTALS

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