X-ray diffraction and Raman scattering study of near-surface structure perfection of GaAs single crystals after anisotropic etching

摘要

Microrelief was developed on the surface of highquality GaAs single crystals by means of wet anisotropic etching.The surface relief characteristics and structure perfection ofsubsurface layer were studied by profilometric, optical reflection,Raman scattering, X-ray, and reflection high-energy electrondiffraction methods.