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Fabrication of low loss coplanar waveguides on gold-doped Czochralski-silicon

机译:掺金的直拉硅片上低损耗共面波导的制备

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Coplanar waveguides fabricated on gold-doped Czochralski-silicon show reduced losses. Gold atoms implanted into silicon substrates compensate for background free carriers introduced by impurities in the material. This leads to an increased silicon resistivity which exhibits lower microwave absorption. High frequency measurements in 1-40 GHz range of coplanar waveguides fabricated on gold-doped silicon show attenuation reductions up to 70%, highlighting the benefits of deep level compensation of shallow level impurities in silicon using gold.
机译:在掺金的切克劳斯基硅上制造的共面波导显示出降低的损耗。注入到硅衬底中的金原子补偿了材料中杂质引入的背景自由载流子。这导致硅电阻率增加,表现出较低的微波吸收。在掺金硅上制造的共面波导的1-40 GHz范围内的高频测量显示衰减最多可降低70%,突出了使用金对硅中浅层杂质进行深层补偿的优势。

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