Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs

摘要

In the past decade the Tunnel Field Effect Transistor (TFET) relying on band-to-band tunneling (BTBT) has emerged as one of the most promising small slope FETs able to achieve a subthreshold swing (SS) below the room temperature 60 mV/dec limit of conventional MOSFET. Many simulation studies attributed to TFETs the potential to outperform conventional MOSFETs in the ultra-low voltage domain (VDD 收起