Spatial Atomic Layer Deposition of Transparent Conductive Oxides

摘要

Undoped and indium doped ZnO films have been grown by Spatial Atomic Layer Deposition at atmospheric pressure. The electrical properties of ZnO films are controlled by varying the indium content in the range from 0 to 15 %. A minimum resistivity value of 3 mΩ· cm is measured in 180 nm thick films for In/(In+Zn) ratio equal to 6 %, corresponding to a majority carrier density of 6·10~(20) cm~(-3) and a mobility of 3 cm~2/Vs. All the films are highly transparent (＞ 80 %) in the visible range.