Linear circuit design-a multistage low noise amplifier

摘要

Accurate characterisation and modelling of the active devices is anprerequisite for successful amplifier design. Scalable S-parameter andnnoise models for FET's are investigated. Based on the results of thenstandard single gate FET, a modelling approach for devices in cascodenconfiguration is presented which was validated up to W-band. Annequivalent circuit based temperature noise model is proposed which cannbe successfully used for the design and simulation of MM-wave low noisenamplifiers. To illustrate millimetre wave amplifier design techniques, an2-stage cascode W-band amplifier with 20 dB gain at 110 GHz fabricatednat FhG-IAF is discussed