A novel linearity enhancement technique for low noise amplifiers by using a π-type drain resistor circuit

摘要

A novel linearity enhancement technique for low noise amplifiers using a p-type drain resistor circuit is proposed. The proposed amplifier employs the p-type drain resistor circuit to stabilize the amplifier instead of a conventional drain series resistor. By using π-type resistor circuit, the output load impedance of the amplifier can be optimized to achieve high linearity and high output power. The proposed low noise amplifiers and the conventional low noise amplifier with a drain series resistor are developed. A P1dB, an OIP3, and an IM3 at about 10dB backoff of the proposed low noise amplifier are improved by 2.9dB and 5.1dB, and 21.7dB, respectively, compared with the conventional low noise amplifier.