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Tunnel Magnetocapacitance in Single-layered Fe/MgF_2 Granular Films

机译:Fe / MgF_2单层颗粒膜中的隧道磁电容

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Magnetocapacitance (MC) effects lead to some appealing spin-based phenomena such as frequencydependentspin transport and spin capacitance, which are crucial for spintronic devices . MC offersattractive prospects for materials research and device applications such as high-frequency devices and energystorage. In magnetic nanogranular film devices, a type of MC referred to as tunnel magnetocapacitance(TMC) is observed. The advantage of using granular films is that they are relatively easy to fabricate and theyhave good thermal stability. However, the TMC ratio is smaller than 1.0% in the low-field range (~1 kOe)even for two-dimensional (2D) granular films, in which a large TMC can be expected. Here, we present abetter enhancement of TMC ratios in single-layered Fe/MgF_2 granular films.
机译:磁电容(MC)效应导致一些吸引人的基于自旋的现象,例如与频率有关的自旋输运和自旋电容,这对于自旋电子器件至关重要。 MC为材料研究和设备应用(例如高频设备和储能)提供了诱人的前景。在磁性纳米颗粒膜装置中,观察到一种称为隧道磁电容(TMC)的MC。使用粒状薄膜的优点是它们相对容易制造并且具有良好的热稳定性。但是,即使对于二维(2D)颗粒薄膜,在低场范围(〜1 kOe)中,TMC比率也小于1.0%,在这种情况下,可以预期会有较大的TMC。在这里,我们提出了单层Fe / MgF_2颗粒薄膜中TMC比的更好提高。

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