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Effect of amorphous fillers on low loss ceramics for advanced microwave electronics

机译:非晶态填料对用于先进微波电子设备的低损耗陶瓷的影响

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In this paper we report the development of a low-temperature sinterable Cu2ZnNb2O8 (CZN) based composite for low-temperature cofired ceramic (LTCC). The CZN ceramics were prepared by the solid-state ceramic route. The calcination and sintering temperatures of CZN were optimized at 800 °C and 975 °C, respectively, for the best density and dielectric properties. The microwave dielectric properties of ceramic were measured by split post dielectric resonator (SPDR). The CZN sintered at 975 °C had εr = 15.2, tanδ = 0.0009 at 5.1 GHz. The sintering temperature of CZN is lowered from 975 °C to 915 °C by the addition of both LBS and LMZBS glasses. CZN mixed with 0.7 wt% LBS and sintered at 915 °C had εr = 14.8, tanδ = 0.001 at 5.1 GHz. The addition of 0.7 wt% LMZBS to CZN and sintered at 935 °C/4 h had εr = 14.6, tanδ = 0.002 at 5.1 GHz.
机译:在本文中,我们报告了用于低温共烧陶瓷(LTCC)的低温可烧结Cu2ZnNb2O8(CZN)基复合材料的开发。通过固态陶瓷路线制备CZN陶瓷。 CZN的煅烧和烧结温度分别在800°C和975°C下进行了优化,以实现最佳的密度和介电性能。陶瓷的微波介电性能是通过分裂后介电共振器(SPDR)测量的。在975°C下烧结的CZN在5.1 GHz下的εr= 15.2,tanδ= 0.0009。通过添加LBS和LMZBS玻璃,CZN的烧结温度从975°C降至915°C。混有0.7 wt%LBS并在915°C烧结的CZN在5.1 GHz下的εr= 14.8,tanδ= 0.001。向CZN中添加0.7 wt%的LMZBS并在935°C / 4 h烧结时,在5.1 GHz下εr= 14.6,tanδ= 0.002。

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