Design and Fabrication of Low Voltage Silicon Lateral Trench Power MOSFETs for High Efficiency DC/DC Converters

摘要

A novel Silicon Lateral Trench Power MOSFET with a significantly reduced gate-to-drain capacitance C_(GD) was proposed. The device has been designed for three blocking voltages 35V, 55V and 80V. The devices have a very low Figure of Merit for their respective blocking voltage, being especially attractive at the higher voltages. Device design issues are discussed in the paper together with a detailed description of the device fabrication.