Preliminary Results from Phase Ⅱ of the Wide Bandgap Semiconductor for RF Applications (WBGS-RF) Program

摘要

This paper details the latest progress in the Wide Bandgap Semiconductors for RF Applications (WBGS-RF) program sponsored by the Microsystems Technology Office of the Defense Advanced Research Projects Agency (DARPA/MTO). While the first phase of WBGS-RF focused on semi-insulating substrates and epitaxial growth, this phase pushes new RF capabilities in wide bandgap device fabrication, showing improvements in power-added efficiency, gain, bandwidth, power density and reliability of wide bandgap RF power devices. Although this report gives initial DC and RF test results from sample devices, further improvement is expected as this phase of the program progresses.