Optimizing InGaP/GaAs HBT Technology for Distributed Amplifier Applications

机译：针对分布式放大器应用优化InGaP / GaAs HBT技术

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, the attributes of HBT device parameters to the performance of distributed amplifiers are evaluated. In addition, the guidelines for optimizing InGaP/GaAs HBT technology for broadband amplifier designs are proposed.

机译：本文评估了HBT器件参数对分布式放大器性能的影响。此外，还提出了针对宽带放大器设计优化InGaP / GaAs HBT技术的指南。

著录项

来源
《Annual International Conference on Compound Semiconductor MANufacturing TECHnology(CS MANTECH); 20060425-27; Vancouver(CA) 》|2006年|P.283-286|共4页
会议地点 Vancouver(CA)
作者
Aroonchat Chatchaikarn; Wing Yau; Yuefei Yang; G.P. Li;
展开▼
作者单位

Integrated Nanosystems Research Facility, University of California, Irvine, CA, 92697;

Global Communication Semiconductors, Inc., Torrance, CA, 90505;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术 ;
关键词
InGaP/GaAs HBT; MMIC; distributed amplifier; manufacturability;

机译：InGaP / GaAs HBT; MMIC;分布式放大器;可制造性;

相似文献

外文文献
中文文献
专利

1. InGaP/GaAs HBT DC-20 GHz distributed amplifier with compact ESD protection circuits [J] . Ma YT, Li GP Journal of Electrostatics . 2006 ,第2期

机译：具有紧凑ESD保护电路的InGaP / GaAs HBT DC-20 GHz分布式放大器
2. 16 dB 80 GHz InGaP/GaAs HBT distributed amplifier [J] . Y. Arayashiki, Y. Ohkubo, Y. Amano, Electronics Letters . 2004 ,第4期

机译：16 dB 80 GHz InGaP / GaAs HBT分布式放大器
3. Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application [J] . Hsieh YC, Chang EY, Yeh SS, Journal of Crystal Growth . 2006 ,第1期

机译：MOVPE对InGaP / GaAs HBT器件应用的InGaP蚀刻停止层生长的优化
4. Optimizing InGaP/GaAs HBT Technology for Distributed Amplifier Applications [C] . Aroonchat Chatchaikarn, Wing Yau, Yuefei Yang, Annual International Conference on Compound Semiconductor MANufacturing TECHnology . 2006

机译：优化Indap / GaAs HBT技术用于分布式放大器应用
5. Strain-balanced InGaP/InGaP multiple quantum well electroabsorption modulators on GaP and GaAsP. [D] . Vogt, Timothy Jon. 1997

机译：GaP和GaAsP上的应变平衡InGaP / InGaP多量子阱电吸收调制器。
6. Effect of Alpha-Particle Irradiation on InGaP/GaAs/Ge Triple-Junction Solar Cells [O] . Jing Xu, Min Guo, Ming Lu, 2018

机译：α粒子辐照对InGaP / GaAs / Ge三结太阳能电池的影响
7. A Fully Integrated Concurrent Dual-band Low-Noise Amplifier Using InGaP/GaAs HBT Technology [O] . Yu-tso Lin, Shey-shi Lu 2015

机译：采用InGap / Gaas HBT技术的全集成并发双频低噪声放大器
8. Optimization of GaAs Photoconductive Switch Technology for Ultra Wideband Applications [R] . Schamiloglu, E. , Islam, N. , Joshi, R. 2000

机译：用于超宽带应用的Gaas光电导开关技术的优化

Optimizing InGaP/GaAs HBT Technology for Distributed Amplifier Applications

摘要

著录项

相似文献

相关主题

期刊订阅