Development of L-band 28V Operation GaAs FET and Optimization for Mass Production

摘要

We have developed L-band FET for 28 V operation and succeeded its mass-production. A main feature of the FET structure is the asymmetrically extended (gamma-shaped) gate. By controlling the deviation of gate fabrication process within 0.1 fun, the high repeatability is achieved. The average Bvgdo of 80.5 V with a standard deviation of 1.4 V are obtained both within lots and across wafer runs. The developed high power push-pull FET achieves 250 W(54 dBm) output power, 15.5 dB linear gain and 25 % drain efficiency at 2.14 GHz. In addition, the device shows excellent reliability with estimated MTTF of greater than 4×l0~6hours at Tch of 145 deg-C.