InSb-based Quantum Well Transistors for High Speed, Low Power Applications

摘要

InSb-based quantum well field-effect transistors with gate length down to 0.1 μm are fabricated for the first time. Room temperature electron mobilities of over 30,000 cm~2V~(-1)s~(-1) are achieved with sheet carrier density greater than 1×10~(12) cm~(-2). 0.1 μm gate length devices exhibit DC transconductance of 775 mS/mm with good output conductance and breakdown characteristics. RF measurements show an f_T of 210 GHz at V_(DS) = 0.5 V. Benchmarking against the state-of-the-art Si MOSFETs indicates that InSb QW transistors can achieve equivalent high speed performance with 5-10 times lower DC power dissipation, and, thus, can be a promising device technology to complement scaled silicon based devices for very low power, ultra-high speed logic applications.