Production Ready Ultra High Breakdown 6' pHEMT Technology

机译：生产就绪的超高击穿6'pHEMT技术

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A production ready pseudomorphic high electron mobility transistor (pHEMT) with high breakdown voltage, improved 1/f noise, and linearity has been developed. This technology shows better than 35V breakdown voltage uniformly across 6-inch wafers. The high performance circuits are demonstrated with 0.5 μm pHEMT process. This PHEMT technology is ready for high volume production with low cost.

机译：已经开发出具有高击穿电压，改善的1 / f噪声和线性度的易于生产的拟态高电子迁移率晶体管（pHEMT）。该技术在6英寸晶圆上均匀地显示出优于35V的击穿电压。 0.5μmpHEMT工艺演示了高性能电路。这项PHEMT技术已准备好以低成本进行大量生产。

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来源
《Annual International Conference on Compound Semiconductor MANufacturing TECHnology(CS MANTECH); 20050411-14; New Orleans,LA(US)》|2005年|P.27-30|共4页
会议地点 New OrleansLA(US)
作者
Cheng-Guan Yuan; Y. Y. Hsieh; T. J.Yeh; Chung-Hsu Chen; D. W. Tu; Yu-Chi Wang; Joe Liu; Saad Murad; Ramon Schook; Frans Bontekoe; Mark Tomesen;
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作者单位

Win Semiconductors Corp. N 69 Technology 7th Rd, Hwaya Technology Park, Kuei Shan Hsiang, Tao Yuan Shien, Taiwan (333);

Philips Semiconductors B.V. Gerstweg 2, 6534 AE, Nijmegen, The Netherlands;

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正文语种 eng
中图分类半导体技术;
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4. Production Ready Ultra High Breakdown 6' pHEMT Technology [C] . Cheng-Guan Yuan, Y. Y. Hsieh, T. J.Yeh, Annual International Conference on Compound Semiconductor MANufacturing TECHnology . 2005

机译：生产准备超高击穿6'PHEMT技术
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Production Ready Ultra High Breakdown 6' pHEMT Technology

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