Scanner effects on directed self-assembly patterning

摘要

Directed self-assembly (DS A) of various polymers is a potential next-generation lithography component. Lithographers can use an ArF scanner to print guide structures with pitches accessible with current technology. The DSA materials, in a non-exposure step, perform pitch multiplication of 1 -D and 2-D guide structures. While research has investigated defects inherent to the DSA material, ArF scanner effects have received little attention. This work uses DSA models and scanner models to assess requirements for ArF immersion scanners for DSA complementary lithography.