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50 keV electron multibeam mask writer for the 11nm HP node: first results of the proof of concept tool (eMET POC)

机译:用于11nm HP节点的50 keV电子多束掩模写入器:概念证明工具(eMET POC)的首批成果

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摘要

First results obtained with IMS Nanofabrication's 50keV proof-of-concept electron multi-beam mask exposure tool(eMET POC) are presented. The eMET POC was designed from scratch to meet the requirements of the 11nm half-pitchnode and features already the sa
机译:介绍了使用IMS Nanofabrication的50keV概念验证的电子多束掩模曝光工具(eMET POC)获得的初步结果。 eMET POC从零开始设计,可以满足11nm半间距节点的要求,并且已经具备

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