A First Order Analysis of Scatterometry Sensitivity for NIL Process

摘要

In this paper the first order analysis of the scatterometry sensitivity up to 45nm HP resin pattern and beyond by usingrnRCWA (Rigorous Coupled Wave-analysis) simulation is described. A criterion, defined as the sum of the absoluterndifference of the reflectivity values between the nominal and varied conditions thorough the spectrum, is introduced.rnThe criterion of this analysis is a kind of quantification of the sensitivity comparing with 65 nm HP resist pattern of ArFrnimmersion process. Furthermore, the simulated result in this analysis can be used to discuss the extendibility ofrnscatterometry.