首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.2 >Laser-induced Oxidation of Metallic Thin Films as a Method for Creating Grayscale Photomasks
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Laser-induced Oxidation of Metallic Thin Films as a Method for Creating Grayscale Photomasks

机译:金属薄膜的激光诱导氧化作为创建灰度光掩模的方法

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Bimetallic Bi/In films demonstrate grayscale levels after exposed with different laser powers due to controlled film oxidation. Although large optical density (OD) change from 3.0 OD to 0.22 OD at 365 nm was observed, these films show a rapid and nonlinear OD change with laser power, which is not desirable for fine control of grayscale levels. This paper aims to explore and evaluate some new metal films as possible candidates for direct-write grayscale photomask applications. Sn/In, Al/Zn, Bi/In/O and Al/In films were DC-sputtered onto glass slides and then were raster-scanned by argon CW laser. Among these films, the highest OD change at 365 nm was found in Sn/In film, Al/Zn shows the most linear relation of OD to laser power modulation, and Bi/In/O has the best over-all performance as a potential grayscale mask material. A grayscale test photomask of 16 x 16, 20 μm squares over the full OD range was made using Bi/In/O and a test exposure created squares of different heights on regular photoresist. Interference lithography using 266 nm DUV has been utilized to investigate the resolution limit of these bimetallic films, which can generate much finer structures. The true resolution limit of Bi/In should be at least less than 50 nm.
机译:双金属Bi / In薄膜由于受控的薄膜氧化,在以不同的激光功率曝光后显示灰度级。尽管在365 nm处观察到从3.0 OD到0.22 OD的大光密度(OD)改变,但是这些薄膜显示出随激光功率快速而非线性的OD变化,这对于精细控制灰度级别是不希望的。本文旨在探索和评估一些新型金属膜,以作为直接写入灰度光掩模应用的可能。将Sn / In,Al / Zn,Bi / In / O和Al / In膜DC溅射到载玻片上,然后通过氩CW激光进行光栅扫描。在这些薄膜中,Sn / In薄膜在365 nm处具有最大的OD变化,Al / Zn显示OD与激光功率调制之间的线性关系最大,而Bi / In / O具有最佳的整体性能。灰度蒙版材料。使用Bi / In / O在整个OD范围内制作了16 x 16、20μm正方形的灰度测试光掩模,并通过测试曝光在常规光刻胶上创建了不同高度的正方形。使用266 nm DUV的干涉光刻技术已被用来研究这些双金属膜的分辨率极限,这种双金属膜可以产生更精细的结构。 Bi / In的真实分辨率极限应至少小于50 nm。

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