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Thin bilayer resists approach for 193nm and future photolithography

【摘要】 Resist aspect ratio has always been an issue for lithographic processes. Smaller CD forces the use of thinner resist films, but dry etch needs a certain amount of thickness in the resist. Various techniques have been proposed and researched to overcome these single-layer resist limitations. Bilayer Si-containing resists are a technique of interest and a strong candidate to replace CVD processes. In this paper, we have characterized bilayer resists and their dry-develop processes, and sought possible uses for advanced lithography, especially by using a thin film (70 nm-90nm). Bilayer resist dry-develop consists of a film shrink as in an exposure reaction with an early-stage resist surface oxidation. We discuss material requirements for this purpose and provide some after-dry-develop images with small CD.

【会议名称】 Advances in Resist Technology and Processing XXIII pt.2

【会议地点】San JoseCA(US)

【作者】 Yoshi Hishiro; Michael Hyatt;

【作者单位】 Micron Technology, Inc., 8000 S. Federal Way, Boise, ID, USA 83707-0006;

【会议组织】

【会议召开年】 2006

【页码】P.61532W.1-61532W.10

【总页数】10

【原文格式】PDF

【正文语种】eng

【中图分类】TN304;

【原文服务方】国家工程技术数字图书馆

【关键词】bilayer resist;Si-containing resist;193nm;photolithography;

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