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Measurements of water distribution in thin lithographic films

机译:光刻薄膜中水分布的测量

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Neutron and x-ray reflectivity measurements quantify the non-uniform distribution of water within poly(4-tert-butoxycarbonyloxystyrene) (PBOCSt) and poly(4-hydroxystyrene) (PHOSt) thin films on silicon wafer substrates. Two contrasting surface treatments were examined, silicon oxide, representing a hydrophilic interface and a trimethylsilane primed surface, representing a hydrophobic interface. The distribution of water in the films was sensitive to the surface preparation and photoresist relative hydrophilicity. Depending upon the water contact angle of the substrate in comparison to the polymer film, an excess of water near the interface occurs when the substrate is more hydrophilic than the photoresist. Likewise, interfacial depletion results when the photoresist is more hydrophilic than the substrate. These non-uniform water distributions occurs within (50 +- 10) A of the photoresist/substrate interface. The water concentration in this interfacial region appears to be independent of the photoresist properties, but is strongly dependent upon the substrate surface energy.
机译:中子和X射线反射率测量可量化硅晶片基板上聚(4-叔丁氧基羰基氧基苯乙烯)(PBOCSt)和聚(4-羟基苯乙烯)(PHOSt)薄膜中水的不均匀分布。检查了两种对比的表面处理,氧化硅代表亲水性界面和三甲基硅烷底漆表面,代表疏水性界面。膜中水的分布对表面制备和光刻胶的相对亲水性敏感。取决于基材相对于聚合物膜的水接触角,当基材比光致抗蚀剂更亲水时,在界面附近会发生过量的水。同样,当光致抗蚀剂比基底更亲水时,导致界面耗尽。这些不均匀的水分布发生在光致抗蚀剂/基底界面的(50±10)A内。该界面区域中的水浓度似乎与光致抗蚀剂的性质无关,但是在很大程度上取决于基材的表面能。

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