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Negative chemical amplification resist systems based on polyhydroxystyrenes and N-substituted imides or aldehydes

机译:基于聚羟基苯乙烯和N-取代的酰亚胺或醛的负化学放大抗蚀剂系统

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Abstract: Aqueous base developable negative deep UV resist systems composed of phenolic resins, monofunctional latent electrophiles, and a sulfonium salt photochemical acid generator are described. This study was carried out to see whether attachment of a bulky substituent onto the phenolic group via C- or O-alkylation reduces the dissolution rate of the phenolic resin in aqueous base to provide negative images even when no crosslinking is involved in the mechanism. The latent electrophiles selected are N-hydroxymethyl and N-aceotxymethylimides as well as high- boiling aldehydes. Our matrix resins are para-, meta-, and ortho-isomers of polyvinylphenol and copolymers of p-hydroxystyrene.!
机译:摘要:描述了由酚醛树脂,单官能潜性亲电试剂和a盐光化学产酸剂组成的可碱显影的负性深紫外抗蚀剂体系。进行该研究以观察是否大的取代基经由C-或O-烷基化连接到酚基上会降低酚醛树脂在水性碱中的溶解速率,即使在该机理中不涉及交联时也可提供负像。选择的潜在亲电试剂是N-羟甲基和N-乙酰氧甲基酰亚胺以及高沸点醛。我们的基体树脂是聚乙烯基苯酚的对位,间位和邻位异构体,以及对羟基苯乙烯的共聚物。

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