INVESTIGATION OF ZnO:N AND ZnO:(Al,N) FILMS FOR SOLAR DRIVEN HYDROGEN PRODUCTION

摘要

ZnO thin films with significantly reduced bandgaps were synthesized by doping N and co-doping Al and N at 100℃. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents than ZnO:N films grown with pure N doping.