Buried heterostructure formation processes for high-performance devices

摘要

Abstract: New AlGaAs buried heterostructure (BH) formation processes based on low temperature (T $LS 600$DGR@C) in-situ mesa melt-etching and liquid phase epitaxial (LPE) regrowth have been studied and applied to the fabrication of BH laser diodes. It was shown that the BH formation process on Al$-x$/Ga$-1$MIN@x$/As laser structures with x $EQ 0.2...0.5 of cladding layers and masking stripes oriented along $LB@01$OBAR1$RB or $LB@0$OBAR11$RB on (100) planes depends on melt-etching rate anisotropy, while in a similar process for x $GRT 0.6, or masking stripe orientations other than $LB@01$OBAR1$RB or $LB@0$OBAR11$RB the most important factors is the melt-etching material selectivity. Difficult AlGaAs nucleation on A-type planes is a distinct feature of LPE regrowth at temperatures lower than 600$DGR@C. Low temperature melt-etching and regrowth produced single mode AlGaAs BH laser diodes emitting at 800 nm with the maximum optical power of 120 mW at 106 mA. !17